Project information
Nucleation and growth of oxygen precipitates in silicon
- Project Identification
- GA202/09/1013
- Project Period
- 1/2009 - 12/2011
- Investor / Pogramme / Project type
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Czech Science Foundation
- Standard Projects
- MU Faculty or unit
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Faculty of Science
- Mgr. Mojmír Meduňa, Ph.D.
- doc. RNDr. Zdeněk Bochníček, Dr.
- doc. Mgr. Ondřej Caha, Ph.D.
- Alan Kuběna
- doc. RNDr. Josef Kuběna, CSc.
- doc. RNDr. Petr Mikulík, Ph.D.
- Keywords
- nucleation, precipitation, silicon
- Cooperating Organization
-
Institute of Materials Physics of the ASCR, v. v. i.
- Responsible person RNDr. Milan Svoboda, CSc.
Publications
Total number of publications: 18
2009
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Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing
J.Phys.: Condens. Matter, year: 2009, volume: 21, edition: 10
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Homogenization of CZ Si wafers by Tabula Rasa annealing
Physica B condensed matter, year: 2009, volume: 404, edition: 23-24
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Homogenization of CZ Si wafers by Tabula Rasa annealing
Year: 2009, type: Conference abstract
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Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
Physica stat.sol.(a), year: 2009, volume: 206, edition: 8
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Towards limits of x-ray specular reflectivity
Materials Structure in Chemistry, Biology, Physics and Technology, year: 2009, volume: 16, edition: 2a
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Vacancies and self-interstitials dynamics in silicon wafers
Solid State Phenomena, year: 2009, volume: Neuveden, edition: 156-158
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X-ray diffraction on precipitates in Czochralski-grown silicon
Physica B condensed matter, year: 2009, volume: 404, edition: 23-24
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X-ray diffraction on precipitates in Czochralski-grown silicon
Year: 2009, type: Conference abstract