Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study

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Authors

LI Jianhua STOKES Donna W. WICKETT J. C. CAHA Ondřej BASSLER Kevin E. MOSS Simon C.

Year of publication 2010
Type Article in Periodical
Magazine / Source Journal of Applied Physics
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords layer superlattices; diffusion; lattice
Description We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.
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