X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

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Authors

MEDUŇA Mojmír HOLÝ Václav ROCH T.

Year of publication 2001
Type Article in Periodical
Magazine / Source Journal of Applied Physics
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES
Description We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.
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