X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy
| Authors | |
|---|---|
| Year of publication | 2001 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Applied Physics |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES |
| Description | We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. |
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