Ablation of binary As2S3, As2Se3, GeS2, GeSe2 and GeSe3 bulk glasses and thin films with a deep ultraviolet nanosecond laser

Varování

Publikace nespadá pod Lékařskou fakultu, ale pod Přírodovědeckou fakultu. Oficiální stránka publikace je na webu muni.cz.

Autoři	KUTÁLEK P. KNOTEK P. ŠANDOVÁ A. VACULOVIČ Tomáš ČERNOŠKOVÁ E. TICHÝ L.
Rok publikování	2021
Druh	Článek v odborném periodiku
Časopis / Zdroj	Applied Surface Science
Fakulta / Pracoviště MU	Přírodovědecká fakulta
Citace
www	https://www.sciencedirect.com/science/article/pii/S0169433221006589#!
Doi	http://dx.doi.org/10.1016/j.apsusc.2021.149582
Klíčová slova	Chalcogenides; Bulk glasses; Thin films; Laser ablation; Laser direct writing
Popis	Binary (As2S3, As2Se3, GeS2 GeSe2 and GeSe3) bulk glasses and corresponding thin films were prepared and illuminated with deep ultraviolet nanosecond (DUV ns) pulsed laser operating at 213 nm. The illumination of samples led to the reproducible crater?s formation. Subsequently, the influence of the pulses number and laser fluence on their creation was studied. The ablation rate and laser-induced ablation threshold (LIAT) were determined based on these experiments. The craters with the help of digital holographic microscopy (DHM), atomic force microscopy (AFM), phase shift imaging mode of AFM, Raman scattering, scanning electron microscopy and energy-dispersive X-ray spectroscopy were characterized. As an application possibility, the formation of the diffraction gratings by laser direct writing is presented and their functionality is demonstrated.